BGSA20VGL8
B G S A 20 VG L 8
H i g h R F Vo l ta ge D u a l S PST A n te n n a A p e r t u r e S h u n t S w i tc h
Features
• Dual SPST designed for high-linearity antenna aperture switching and
RF tuning applications
• Low RON resistance of 1.6 ohm at each port in ON state
• Low COFF capacitance of 240 fF at each port in OFF state
• > 67 V RF voltage OFF state handling
• Low harmonic generation
• GPIO control interface - including 4 control states
• Supply voltage range: 1.65 to 3.6 V
• No RF parameter change within supply voltage range
• Small form factor 1.1 mm x 1.1 mm (MSL1, 260◦ C per JEDEC J-STD-020)
• Suitable for EDGE/CDMA/WCDMA/C2K/LTE/5G Applications
• RoHS and WEEE compliant package
1.1 x 1.1 mm2
Application
• Impedance Tuning
• Antenna Tuning
• Inductance Tuning
• Tunable Filters
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block diagram
VDD
RF1
RF2
Voltage
Regulator
CTL1
CTL2
Driver
Chargepump
GND
Data Sheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Table of Contents
Table of Contents
Table of Contents
1
1
2
Features
2 Maximum Ratings
3
3 DC Characteristics
5
4 RF Small Signal Characteristics
6
5 RF large signal parameter
7
6 Logic Table
9
7 Application Information
9
8 Package Information
Data Sheet
10
1
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Features
1 Features
• Dual SPST designed for high-linearity antenna aperture switching and
RF tuning applications
• Low RON resistance of 1.6 ohm at each port in ON state
• Low COFF capacitance of 240 fF at each port in OFF state
• > 67 V RF voltage OFF state handling
• Low harmonic generation
• GPIO control interface - including 4 control states
• Supply voltage range: 1.65 to 3.6 V
• No RF parameter change within supply voltage range
• Small form factor 1.1 mm x 1.1 mm (MSL1, 260◦ C per JEDEC J-STD-020)
• Suitable for EDGE/CDMA/WCDMA/C2K/LTE/5G Applications
• RoHS and WEEE compliant package
Description
The BGSA20VGL8 is a versatile Dual Single Pole Single Throw (SPST) RF antenna shunt aperture switch optimized for low Coff
as well as low Ron enabling applications up to 6.0 GHz. This single supply chip integrates 2 digital control pins. Unlike GaAs
technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at
all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due
to its very high RF voltage ruggedness, it is suited for switching any reactive devices such as inductors and capacitors in RF
matching circuits without significant losses in quality factors.
Product Name
Marking
Package
Ordering Information
BGSA20VGL8
V
TSLP-8-1
BGSA 20VGL8 E6327
Data Sheet
2
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Maximum Ratings
2 Maximum Ratings
Table 1: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Frequency Range
f
0.4
–
–
GHz
1)
Supply voltage 2)
VDD
-0.5
–
6
V
only for infrequent and short
-55
–
150
◦
Storage temperature range
TSTG
RF voltage
VRF _max
–
–
70
V
duration time periods
C
–
Short term peaks (1µs in 0.1%
duty cycle), exceeding typical
linearity, Ron and Coff parameters, in Isolation mode, test
condition schematic in Fig. 1
ESD robustness, CDM 3)
VESDCDM
-1
–
+1
kV
ESD robustness, HBM 4)
VESDHBM
-2
–
+2
kV
Junction temperature
Tj
–
–
125
◦
Maximum DC-voltage on RF-Ports and RF-
VRFDC
0
–
0
V
VCTL
-0.7
–
3.3
V
C
Ground
Control Voltage Levels
–
No DC voltages allowed on RFPorts
–
Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports VRFDC has
to be 0V.
2) Note: Consider potential ripple voltages on top of V . Including RF ripple, V
DD
DD must not exceed the maximum ratings: VDD = VDC + VRipple .
3) Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes.
Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
4) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1,5 kΩ, C = 100 pF).
1)
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
affect device reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
3
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Maximum Ratings
50 Ohm
Spectrum
Analyser
SIGNAL
SOURCE
(Hx Monitor)
50 Ohm trasmission line
Power
Meter
Vdd
Vrf
VDD
RF1
RF2
Voltage
Regulator
CTL1
Driver
CTL2
Chargepump
GND
Figure 1: RF operating voltage measurement configuration - All OFF mode. RF1 stressed.
50 Ohm
Spectrum
Analyser
SIGNAL
SOURCE
(Hx Monitor)
50 Ohm trasmission line
Power
Meter
Vdd
Vrf
VDD
CTL1
RF1
RF2
Voltage
Regulator
Driver
CTL2
Chargepump
GND
Figure 2: RF operating voltage measurement configuration - All OFF mode. RF2 stressed.
Data Sheet
4
Revision 2.1
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BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
DC Characteristics
3 DC Characteristics
Table 2: Operation Ranges
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VDD
1.65
2.8
3.6
V
–
Supply current
IDD
40
70
–
µA
–
Control voltage low
VCtl,low
0
–
0.45
V
–
Control voltage high
VCtl,high
1.2
1.8
2.85
V
VCtl,high VDD
Control current low
ICtl,low
-1
0
1
µA
–
Control current high
ICtl,high
-1
0
4
µA
VCtl,high VDD
1 MΩ Pull-Down resistor at
Control Pins
Ambient temperature
TA
RF switching time
Startup time
VDD
-40
C
25
85
◦
tST
4.5
8
µs
tPup
8
10
µs
–
PIN = 0 dBm, Z0 = 50 Ω,
TA = −40 ◦C... + 85 ◦C
VDD = 1.65 − 3.6 V
Referring Fig. 3
VDD Min.
VCtl
tPUP
VCtl_H Min.
VCtl_L Max.
tST
RF Path A
tST
90%
90%
90%
RF Path B
Figure 3: Switching Time Definition
Data Sheet
5
Revision 2.1
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BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
RF Small Signal Characteristics
4 RF Small Signal Characteristics
Table 3: Parametric specifications using SPST configuration
Parameter
Symbol
RF1 or RF2 to Ground
RON
Values
Min.
Unit
Typ.
Max.
1.6
1.7
Ω
VDD = 1.65 − 3.6 V ,
TA = 25 ◦C
ON DC resistance
RF1 or RF2 to Gnd
ROFF
250
STATE / Notes
270
kΩ
OFF DC resistance
RF1 or RF2 to Ground
240
COFF
300
fF
VDD = 1.65 − 3.6 V , TA = 25 ◦C,
extracted from Isolation (S21) measurement Z0 = 50 Ω
OFF capacitance
Table 4: RF electrical parameters
Isolation: RF1 to RF2 or RF2 to RF1 (1,2,3)
Parameter
Min.
Values
Typ.
698 - 910 MHz
49
53
dB
1710 - 1910 MHz
43
45
dB
1911 - 2169 MHz
42
44
dB
40
43
dB
3300 - 3800 MHz
38
40
dB
3801 - 4800 MHz
35
39
dB
4801 - 6000 MHz
32
37
dB
2170 - 2690 MHz
Symbol
ISORF 1RF 2
Unit
STATE / Notes
Max.
VDD = 1.65 − 3.6 V , Z0 = 50 Ω,
TA = −40 ◦C... + 85 ◦C
1)
Valid for all RF power levels, no compression behavior
2) SOLT-calibrated, P = 0 dBm
IN
3) On application board without any matching components
Data Sheet
6
Revision 2.1
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BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
RF large signal parameter
5 RF large signal parameter
Table 5: RF large signal specifications at TA = 25 ◦C
Parameter
Symbol
Max. RF Operating Voltage
VRF _opr
Values
Min.
Typ.
Max.
–
–
67
Unit
Note / Test Condition
V
In Isolation mode 900MHz, test condition schematic in Fig. 1 or Fig. 2
for H2/H3 < -33 dBm @ 50Ω
Harmonic Generation up to 12.75 GHz
All RF Ports - Second Order Harmonics
PH2
-76
-73
dBm
25 dBm, 50Ω, f0 = 663 MHz, test condition in Fig. 1 and Fig. 2
All RF Ports - Third Order Harmon-
PH3
-86
-85
dBm
25 dBm, 50Ω, f0 = 663 MHz, test con-
ics
All RF Ports - Second Order Har-
dition in Fig. 1 and Fig. 2
-58
PH2
-56
dBm
monics
All RF Ports - Third Order Harmon-
dition in Fig. 1 and Fig. 2
-72
PH3
-70
dBm
ics
All RF Ports - Second Order Har-
PH2
-58
-55
dBm
PH3
-70
-68
dBm
-66
PH2
-64
dBm
-79
PH3
-77
dBm
-65
PH2
-63
dBm
-80
PH3
-78
dBm
-66
PH2
-64
dBm
25 dBm, 50Ω, f0 = 5000 MHz, test condition in Fig. 1 and Fig. 2
PH3
-81
-80
dBm
ics
All RF Ports
25 dBm, 50Ω, f0 = 3500 MHz, test condition in Fig. 1 and Fig. 2
monics
All RF Ports - Third Order Harmon-
25 dBm, 50Ω, f0 = 3500 MHz, test condition in Fig. 1 and Fig. 2
ics
All RF Ports - Second Order Har-
25 dBm, 50Ω, f0 = 2690 MHz, test condition in Fig. 1 and Fig. 2
monics
All RF Ports - Third Order Harmon-
25 dBm, 50Ω, f0 = 2690 MHz, test condition in Fig. 1 and Fig. 2
ics
All RF Ports - Second Order Har-
33 dBm, 50Ω, f0 = 1910 MHz, test condition in Fig. 1 and Fig. 2
monics
All RF Ports - Third Order Harmon-
33 dBm, 50Ω, f0 = 1910 MHz, test condition in Fig. 1 and Fig. 2
ics
All RF Ports - Second Order Har-
35 dBm, 50Ω, f0 = 920 MHz, test condition in Fig. 1 and Fig. 2
monics
All RF Ports - Third Order Harmon-
35 dBm, 50Ω, f0 = 920 MHz, test con-
25 dBm, 50Ω, f0 = 5000 MHz, test condition in Fig. 1 and Fig. 2
PHx
–
–
-80
dBm
IIP2, low
IIP2,l
123
125
131
dBm
IIP2, high
IIP2,h
127
130
135
dBm
IIP3
77
78
79
dBm
25 dBm, 50Ω
Intermodulation Distortion IMD2
IIP2 conditions table 8
Intermodulation Distortion IMD3
IIP3
Data Sheet
7
IIP3 conditions table 9
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
RF large signal parameter
Table 6: IIP2 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
[MHz]
[dBm]
[MHz]
[dBm]
Band 1 Low
2140
1950
20
190
-15
Band 1 High
2140
1950
20
4090
-15
Band 5 Low
881.5
836.5
20
45
-15
Band 5 High
881.5
836.5
20
1718
-15
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
Table 7: IIP3 conditions table
Band
[MHz]
[MHz]
[dBm]
[MHz]
[dBm]
Band 1
2140
1950
20
1760
-15
Band 5
881.5
836.5
20
791.5
-15
Data Sheet
8
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Application Information
6 Logic Table
Table 8: Logic Table
CTL 1
CTL 2
Mode
0
0
RF1 and RF2 isolated from ground
0
1
RF2 connected to ground
1
0
RF1 connected to ground
1
1
RF1 and RF2 connected to ground
7 Application Information
Pin Configuration and Function
NC
RF1
1
GND
2
VDD
3
8
4
7
RF2
6
GND
5
CTL2
CTL1
Figure 4: BGSA20VGL8 Pin Configuration (top view)
Table 9: Pin Definition and Function
Pin No.
Name
Function
1
RF1
RF port
2
GND
Ground
3
VDD
DC Supply Voltage
4
CTL1
Control Pin 1
5
CTL2
Control Pin 2
6
GND
Ground
7
RF2
RF port
8
NC
Not Connected
Table 10: ESD robustness, System Level Test (SLT)
Parameter
Symbol
ESD SLT 1)
VESDSLT
1)
Values
Min.
Typ.
Max.
-8
–
+8
Unit
Note / Test Condition
kV
RF1, RF2 vs system GND, with 27 nH shunt inductor
IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Data Sheet
9
Revision 2.1
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BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Package Information
8 Package Information
A
+0.01
1.1±0.05
0.2±0.035
0.39-0.03
0.1 A
INDEX
(LASERED)
0.02 MAX.
STAND OFF
5
2
6
1
7
0.4
3
0.2±0.035
B
1.1±0.05
0.1 B
4
8
0.4
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 5: TSLP-8-1 Package Outline (top, side and bottom views)
V
Date code (YW)
Type code
Pin 1 marking
Figure 6: Marking Specification (top view): Date code digits Y and W defined in Table 11/12
Data Sheet
10
Revision 2.1
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BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Package Information
Table 11: Year date code marking - digit "Y"
Year
"Y"
Year
"Y"
Year
"Y"
2010
0
2020
0
2030
0
2011
1
2021
1
2031
1
2012
2
2022
2
2032
2
2013
3
2023
3
2033
3
2014
4
2024
4
2034
4
2015
5
2025
5
2035
5
2016
6
2026
6
2036
6
2017
7
2027
7
2037
7
2018
8
2028
8
2038
8
2019
9
2029
9
2039
9
Table 12: Week date code marking - digit "W"
Data Sheet
Week
"W"
Week
"W"
Week
"W"
Week
"W"
Week
"W"
1
A
12
N
23
4
34
h
45
v
2
B
13
P
24
5
35
j
46
x
3
C
14
Q
25
6
36
k
47
y
4
D
15
R
26
7
37
l
48
z
5
E
16
S
27
a
38
n
49
8
6
F
17
T
28
b
39
p
50
9
7
G
18
U
29
c
40
q
51
2
8
H
19
V
30
d
41
r
52
3
9
J
20
W
31
e
42
s
53
M
10
K
21
Y
32
f
43
t
11
L
22
Z
33
g
44
u
11
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Package Information
∅0.25
0.25
0.4
0.4
0.25
0.4
copper
0.4
solder mask
stencil apertures
ALL DIMENSIONS ARE IN UNITS MM
Figure 7: Footprint Recommendation
2
PIN 1
INDEX MARKING
0.5
1.25
8
4
1.25
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 8: TSLP-8-1 Carrier Tape
Data Sheet
12
Revision 2.1
2021-06-23
BGSA20VGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Revision History
Creation of document Revision 2.1, 2021-06-23
Page or Item
Subjects (major changes since previous revision)
-
Release of the final datasheet
Data Sheet
13
Revision 2.1
2021-06-23
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-06-23
Published by
Infineon Technologies AG
81726 Munich, Germany
c 2021 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
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IMPORTANT NOTICE
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or
any information regarding the application of the product, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without
limitation warranties of non-infringement of intellectual
property rights of any third party. In addition, any information given in this document is subject to customer’s
compliance with its obligations stated in this document
and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product information given in this document with respect to such application.
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